Nano-sized Cu(II) and Zn(II) complexes and their use as a precursor for synthesis of CuO and ZnO nanoparticles: A study on their sonochemical synthesis,characterization, and DNA-binding/cleavage,anticancer, and antimicrobial activities

Two new divalent copper (C1) and zinc (C2) chelates having the formulae [M(PIMC)₂] (where M = Cu(II), Zn(II) and PIMC = Ligand [(E)-3-(((3-hydroxypyridin-2-yl)imino)methyl)-4H-chromen-4-one] were obtained and characterized by several techniques. Structures and geometries of the synthesized complexes were judged based on the results of alternative analytical and spectral tools supporting the proposed formulae. IR spectral data confirmed the coordination of the ligands to the copper and zinc centers as monobasic tridentate in the enol form. Thermal analysis, UV-Vis spectra and magnetic moment confirmed the geometry around the copper center to be tetrahedral, square pyramidal and octahedral. Study of the binding ability of the synthesized compounds with Circulating tumor DNA (CT-DNA) bas been evaluated applying UV-Vis spectral titration and viscosity measurements. The copper and zinc oxides were achieved from the copper and zinc nano-particles structures Schiff base complexes as the raw material after calcination for 5 hr at 600°C. On the other hand, synthesized of C1 and C2 NPs were used as suitable precursors to the preparation of CuO and ZnO NPs. Finally, the synthesized of the two complexes exhibited enhanced activity against the tested bacterial (Staphylococcus aureus and Escherichia Coli) and fungal strains (Candida albicans and Aspergillus fumigatus) as compared to HPIMC. Among all these synthesized compounds, C1 exhibits good cleaving ability compared to other newly synthesized C2.     

直接置换法制备包覆型纳米铜-银双金属粉末

 以AgNO₃为主盐，采用直接置换法初步制备了包覆型纳米铜-银双金属粉末，分析了工艺条件对包覆效果的影响，并用透射电子显微镜、X射线能量色散谱仪和X射线衍射仪进行了表征。实验结果表明：纳米铜-银双金属粉末为包覆型结构，平均粒径约70 nm，分散性较好，表面银的原子分数达到74.28%。在洗涤过程中加入一定量的保护剂，有效解决了纳米铜粉的氧化问题。     

GaN氢化物气相外延生长系统的设计与制作

根据GaN氢化物气相外延生长(HVPE)的原理,设计制作了双温区卧式HVPE系统．根据实际生长中出现的问题和CaN样品的测试情况,对系统进行了逐步的调试和改进．     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

The structure of CeAlO3 by Rietveld refinement of X-ray powder diffraction data

The room temperature structure of perovskite CeAlO₃ has been reinvestigated by X-ray powder diffraction. The Rietveld refinement has confirmed the tetragonal symmetry; but revealed a super cell, a=5.32489(6) Å and c=7.58976(10) Å, with the space group I4/mcm. In CeAlO₃, the distortion from the ideal cubic perovskite is caused by the cooperative tilting of the AlO₆ octahedra around the primitive cubic [001]_p-axis.     

High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy

We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm²/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (N_s) for the first time. N_s increased from 1.0×10¹² to 2.7×10¹³ cm⁻² when the Al composition increased from 0.78 to 0.89.     

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface.     

Effect of plasma treatment on interface property of BCN/GaN structure

Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N₂) and hydrogen (H₂) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 10¹⁰ eV⁻¹ cm⁻² for the BCN/GaN structure with mixed N₂ and H₂ plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 10¹⁰ eV⁻¹ cm⁻² is maintained.     

Bi12TiO20纳米粉体的制备及其光吸收特性研究

以钛酸四丁酯和硝酸铋为原料 ,利用化学溶液分解法制备了Bi12 TiO2 0 纳米多晶粉体 .采用XRD和TEM对其结构和形貌进行了表征 .结合热重 差热 (TG DTA)分析 ,探讨了Bi12 TiO2 0 晶相的形成机理 .通过UV Vis漫反射谱的测定 ,研究了Bi12 TiO2 0 纳米晶粉体的光吸收特性 .结果显示 ,从组成为化学计量比的前驱液中可以很容易制得纯Bi12 TiO2 0 纳米晶粉体 ,该Bi12 TiO2 0 纳米晶粉体呈现了在很宽的波长范围内 (5 6 0～ 385nm )对光的吸收的特性 .     

Cold compaction of ceramic powder: Computational analysis of the effect of pressing method and die shape

This paper deals with a computational analysis of the influence of the pressing method and part geometry on the final density distribution in the cold compaction process of ceramic alumina powders. The analysis is based on the explicit finite-element model proposed and validated in a previous study. The mechanical behavior of the processing material is described using a multisurface elastoplastic model, the modified Drucker-Prager/Cap model Published in Prikladnaya Mekhanika, Vol. 43, No. 10, pp. 129–134, October 2007.